BSIM3 to hand analysis

Hi, I am wondering how to link the BSIM3 to the simple MOSFET ids equations.
I understand that parameters such as Vth, un*Cox, and lambda can be
extracted from the curves.

My question is, what is the best way to use the BSIM3 spice model to come up
with some parameters that will be useful for hand analysis?

Thanks!!!

 

The BSIM series is determines the working region of the MOSFET first
and then calculate the drain current. The crucial part is the
threshold voltage... you can extract this with a simple Id-Vgs sweep
at low drain bias = when the transistor turns "on". Once you know Vth
you can derive the current gain (mu*Cox as you know W/L)

 

If you have access to IEEE database, have a look
at this paper:

"BSIM3v3 Key Parameter Extraction for Efficient Circuit Design"
Jitkasame Ngarmil and Wichai Sangnak
in ICSE2000 Proceedings, Nov.2000

exactly what you're looking for.

stéphane